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HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Features
* * * *
Plastic Packaged GaAs Power FET Suitable for Commercial Wireless Applications High Efficiency 3V to 6V Operation
Outline Dimensions
1 Pin 1: Source Pin 2: Gate Pin 3: Drain
Description
The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
2
3
Absolute Maximum Ratings
VDS VGS ID IG TCH TSTG PT Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +7V -5V IDSS 1mA 150C -65 to +150C 0.7 Watt
PB Package (SOT-23)
Electrical Specifications (TA=25C) f=1900 MHz for all RF Tests
Symbol IDSS VP gm Rth P1dB Parameters & Conditions Saturated Current at VDS=5V, VGS=0V Pinch-off Voltage at VDS=5V, ID=5.5mA Transconductance at VDS=5V, ID=55mA Thermal Resistance Power Output at Test Points VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Gain at 1dB Compression Point VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Power-Added Efficiency (POUT = P1dB) VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Units mA V mS C/W dBm Min. 90 -3.5 16.5 19.5 Typ. 110 -2.0 60 200 17.5 21.0 13.0 14.0 35.0 45.0 Max. -1.5 -
G1dB
dB
PAE
%
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Typical Performance at 25C
Output Power & Efficiency vs Vds @ f=0.9GHz,Ids=55mA
Po (dBm) 22 20 40 18 16 10 14 1 2 3 4 5 6 0 Vds (V) 30 20 Po PAE PAE (%) 60 50
Output Power & Efficiency vs Vds @ f=1.9GHz,Ids=55mA
Po (dBm) 22
PAE (%) 60 50
20 40 18 30 20 16 10 14 1 2 3 4 5 6 0 Vds (V) Po PAE
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=3V
Po (dBm) 20 PAE (%) 60 50 15 40 10 Gain 5 10 0 -8 -4 0 4 8 12 0 Pin (dBm) 30 20 Po Gain Eff
Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=3V
Po (dBm) 20 PAE (%) 60 50 15 40 10 Gain 5 10 0 -8 -4 0 4 8 12 16 0 Pin (dBm) 30 20 Po Gain Eff
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=5V
Po (dBm) 25 20 15 Gain 10 5 0 -8 -4 0 4 8 12 30 20 10 0 Pin (dBm) PAE (%) 60 50 40 Po Gain Eff
Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=5V
Po (dBm) 40 PAE (%) 70 60 30 50 40 20 Gain 10 30 20 10 0 -8 -4 0 4 8 12 16 0 Pin (dBm) Po Gain Eff
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Frequency @ Vds=3V, Ids=55mA
Po (dBm) 25 20 40 15 Gain 10 10 5 0.7 0.8 0.9 1.0 1.1 0 f (GHz) 30 20
PAE (%) 60 50 Po Gain PAE
Output Power & Efficiency & Gain vs Frequency @ Vds=5V, Ids=55mA
Po (dBm) 25 20
PAE (%) 60 50 40 Po Gain PAE
15 Gain 10
30 20 10
5 1.6 1.7 1.8 1.9 2.0
0 2.1 f (GHz)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Power Derating Curve
1
Total Power Dissipation,PT (W)
(25,0.7) 0.5
(150,0) 0 0 50 100 150 225
Case Temperature,TC ()
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES VDS=3V, IDS=0.5IDSS
(GHz)
0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00
S11
0.948 0.951 0.917 0.921 0.900 0.882 0.863 0.845 0.830 0.806 0.790 0.772 0.754 0.737 0.719 0.705 0.688 0.672 0.656 0.645 0.633 0.621 0.609 0.592
ANG
-23.77 -26.56 -30.62 -33.76 -37.95 -41.80 -45.32 -49.01 -53.02 -56.42 -60.86 -64.64 -68.42 -72.35 -75.84 -79.81 -83.30 -86.86 -90.42 -93.62 -96.88 -99.97 -102.83 -106.18
S21
3.799 3.804 3.776 3.791 3.749 3.718 3.675 3.660 3.617 3.573 3.516 3.459 3.416 3.360 3.295 3.246 3.177 3.111 3.050 2.997 2.943 2.882 2.834 2.773
ANG
156.53 154.09 150.89 147.31 144.12 140.69 137.44 134.23 130.89 127.74 124.44 121.28 118.34 115.14 112.33 109.54 106.66 103.89 101.13 98.78 96.01 93.79 91.39 88.94
S12
0.023 0.027 0.030 0.033 0.036 0.040 0.042 0.045 0.047 0.050 0.053 0.054 0.056 0.059 0.061 0.063 0.065 0.067 0.067 0.070 0.070 0.072 0.074 0.074
ANG
81.85 80.61 78.24 78.56 77.09 75.16 74.56 74.13 72.62 71.86 70.62 70.36 69.35 68.31 67.38 68.36 66.96 66.79 65.87 66.25 66.11 65.76 66.42 66.09
S22
0.628 0.635 0.640 0.620 0.623 0.608 0.607 0.609 0.596 0.592 0.585 0.579 0.573 0.566 0.556 0.549 0.543 0.541 0.539 0.536 0.535 0.533 0.530 0.531
ANG
-6.09 -8.06 -8.25 -10.94 -11.31 -12.06 -13.70 -14.52 -16.12 -17.43 -18.68 -19.89 -20.89 -22.35 -23.90 -25.25 -26.54 -27.60 -28.52 -30.05 -31.04 -32.48 -33.54 -34.72
S-MAGN AND ANGLES VDS=5V, IDS=0.5IDSS
(GHz)
0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00
S11
0.951 0.954 0.920 0.926 0.904 0.889 0.870 0.851 0.837 0.816 0.800 0.784 0.764 0.750 0.732 0.716 0.700 0.686 0.672 0.658 0.647 0.636 0.625 0.606
ANG
-23.36 -26.14 -30.14 -33.20 -37.37 -41.13 -44.66 -48.32 -52.25 -55.67 -60.05 -63.85 -67.67 -71.58 -75.13 -79.06 -82.44 -86.01 -89.49 -92.95 -96.07 -99.18 -102.21 -105.58
S21
3.450 3.461 3.448 3.452 3.426 3.402 3.370 3.359 3.326 3.287 3.243 3.195 3.159 3.110 3.055 3.018 2.957 2.902 2.846 2.794 2.753 2.695 2.648 2.595
ANG
157.05 154.77 151.59 147.98 144.89 141.52 138.17 135.14 131.69 128.60 125.29 122.12 119.17 115.98 113.24 110.26 107.41 104.53 101.76 99.40 96.46 94.13 91.62 89.15
S12
0.020 0.022 0.024 0.026 0.030 0.031 0.033 0.036 0.037 0.039 0.040 0.042 0.043 0.045 0.047 0.048 0.049 0.050 0.052 0.052 0.054 0.055 0.057 0.058
ANG
82.24 80.78 78.75 79.31 77.60 75.36 74.89 73.98 73.82 72.86 71.72 72.09 70.69 71.38 70.94 71.01 71.24 70.51 70.96 71.62 71.12 72.37 73.34 72.95
S22
0.758 0.767 0.776 0.753 0.757 0.746 0.741 0.745 0.734 0.726 0.722 0.714 0.711 0.702 0.697 0.693 0.690 0.687 0.682 0.681 0.678 0.675 0.674 0.672
ANG
-5.60 -7.30 -7.48 -9.89 -10.29 -10.86 -12.40 -13.31 -14.61 -15.93 -17.17 -18.31 -19.07 -20.61 -21.68 -22.81 -24.09 -25.21 -26.31 -27.68 -28.79 -30.12 -31.29 -32.53
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.

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